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insulated gate bipolar transistor with ultrafast soft recovery diode 01/07/13 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 18 i c @ t c = 100c continuous collector current 10 i cm pulsed collector current 26 i lm clamped inductive load current 26 a i f @ t c = 25c diode continuous forward current 18 i f @ t c = 100c diode continuous forward current 10 i fm diode maximum forward current 26 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 90 p d @ t c = 100c maximum power dissipation 36 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) ? low vce (on) non punch through igbt technology. ? low diode vf. ? 10 s short circuit capability. ? square rbsoa. ? ultrasoft diode reverse recovery characteristics. ? positive vce (on) temperature coefficient. ? lead-free benefits www.irf.com 1 ? benchmark efficiency for motor control. ? rugged transient performance. ? low emi. ? excellent current sharing in parallel operation. thermal resistance parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 1.4 r jc junction-to-case - diode ??? ??? 4.4 r cs case-to-sink, flat, greased surface ??? 0.50 ??? c/w r ja junction-to-ambient, typical socket mount ??? ??? 62 r ja junction-to-ambient (pcb mount, steady state) ??? ??? 40 wt weight ??? 1.44 ??? g irgb6b60kdpbf IRGS6B60KDPBF irgsl6b60kdpbf e g n-channel c v ces = 600v i c = 10a, t c =100c t sc > 10 s, t j =150c v ce(on) typ. = 1.8v d 2 pak IRGS6B60KDPBF to-220ab irgb6b60kdpbf to-262 irgsl6b60kdpbf
irgb/s/sl6b60kdpbf 2 www.irf.com electrical characteristics @ t j = 25c (unless otherwise specified) ref.fig. 5, 6,7 9,10,11 9,10,11 12 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ??? ??? v v ge = 0v, i c = 500 a v (br)ces / t j temperature coeff. of breakdown voltage ??? 0.3 ??? v/c v ge = 0v, i c = 1.0ma, (25c-150c) v ce(on) collector-to-emitter saturation voltage 1.5 1.80 2.20 v i c = 5.0a, v ge = 15v ??? 2.20 2.50 i c = 5.0a,v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.5 4.5 5.5 v v ce = v ge , i c = 250 a v ge(th) / t j temperature coeff. of threshold voltage ??? -10 ??? mv/c v ce = v ge , i c = 1.0ma, (25c-150c) g fe forward transconductance ??? 3.0 ??? s v ce = 50v, i c = 5.0a, pw=80 s i ces zero gate voltage collector current ??? 1.0 150 av ge = 0v, v ce = 600v ??? 200 500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ??? 1.25 1.45 i c = 5.0a ??? 1.20 1.40 v i c = 5.0a t j = 150c i ges gate-to-emitter leakage current ??? ??? 100 na v ge = 20v 8 parameter min. typ. max. units conditions qg total gate charge (turn-on) ??? 18.2 ??? i c = 5.0a qge gate - emitter charge (turn-on) ??? 1.9 ??? nc v cc = 400v qgc gate - collector charge (turn-on) ??? 9.2 ??? v ge = 15v e on turn-on switching loss ??? 110 210 ji c = 5.0a, v cc = 400v e off turn-off switching loss ??? 135 245 v ge = 15v,r g = 100 , l =1.4mh e tot total switching loss ??? 245 455 ls = 150nh t j = 25c t d(on) turn-on delay time ??? 25 34 i c = 5.0a, v cc = 400v t r rise time ??? 17 26 v ge = 15v, r g = 100 l =1.4mh t d(off) turn-off delay time ??? 215 230 ns ls = 150nh, t j = 25c t f fall time ??? 13.2 22 e on turn-on switching loss ??? 150 260 i c = 5.0a, v cc = 400v e off turn-off switching loss ??? 190 300 jv ge = 15v,r g = 100 , l =1.4mh e tot total switching loss ??? 340 560 ls = 150nh t j = 150c t d(on) turn-on delay time ??? 28 37 i c = 5.0a, v cc = 400v t r rise time ??? 17 26 v ge = 15v, r g = 100 l =1.4mh t d(off) turn-off delay time ??? 240 255 ns ls = 150nh, t j = 150c t f fall time ??? 18 27 c ies input capacitance ??? 290 ??? v ge = 0v c oes output capacitance ??? 34 ??? pf v cc = 30v c res reverse transfer capacitance ??? 10 ??? f = 1.0mhz t j = 150c, i c = 26a, vp =600v v cc = 500v, v ge = +15v to 0v, st j = 150c, vp =600v, r g = 100 v cc = 360v, v ge = +15v to 0v erec reverse recovery energy of the diode ??? 90 175 jt j = 150c t rr diode reverse recovery time ??? 70 80 ns v cc = 400v, i f = 5.0a, l = 1.4mh i rr diode peak reverse recovery current ??? 10 14 a v ge = 15v,r g = 100 , ls = 150nh switching characteristics @ t j = 25c (unless otherwise specified) rbsoa reverse bias safe operting area full square scsoa short circuit safe operting area 10 ??? ??? ref.fig. ct1 ct4 ct4 13,15 wf1wf2 4 ct2 ct3 wf4 17,18,19 20, 21 ct4,wf3 ct4 r g = 100 14, 16 ct4 wf1 wf2 note: to are on page 15
irgb/s/sl6b60kdpbf www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t j 150c fig. 4 - reverse bias soa t j = 150c; v ge =15v 0 20 40 60 80 100 120 140 160 t c (c) 0 10 20 30 40 50 60 70 80 90 100 p t o t ( w ) 1 10 100 1000 10000 v ce (v ) 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms dc 10 100 1000 v ce (v) 0 1 10 100 i c a ) 0 20 40 60 80 100 120 140 160 t c (c) 0 5 10 15 20 i c ( a )
irgb/s/sl6b60kdpbf 4 www.irf.com fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80 s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 8 - typ. diode forward characteristics tp = 80 s fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80 s 0123456 v ce (v) 0 2 4 6 8 10 12 14 16 18 20 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0123456 v ce (v) 0 2 4 6 8 10 12 14 16 18 20 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 0.5 1.0 1.5 2.0 v f (v) 0 5 10 15 20 25 30 i f ( a ) -40c 25c 150c 0123456 v ce (v) 0 2 4 6 8 10 12 14 16 18 20 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v
irgb/s/sl6b60kdpbf www.irf.com 5 fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 150c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s 5 101520 v ge (v ) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 3.0a i ce = 5.0a i ce = 10a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 3.0a i ce = 5.0a i ce = 10a 0 5 10 15 20 v ge (v) 0 5 10 15 20 25 30 35 40 i c e ( a ) t j = 25c t j = 150c t j = 150c t j = 25c 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 3.0a i ce = 5.0a i ce = 10a
irgb/s/sl6b60kdpbf 6 www.irf.com fig. 14 - typ. switching time vs. i c t j = 150c; l=1.4mh; v ce = 400v r g = 100 ; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 150c; l=1.4mh; v ce = 400v r g = 100 ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l=1.4mh; v ce = 400v i ce = 5.0a; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l=1.4mh; v ce = 400v i ce = 5.0a; v ge = 15v 0 50 100 150 200 r g ( ) 0 50 100 150 200 250 e n e r g y ( j ) e on e off 0 5 10 15 20 i c (a) 0 100 200 300 400 500 600 700 e n e r g y ( j ) e off e on 0 5 10 15 20 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 50 100 150 200 r g ( ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on
irgb/s/sl6b60kdpbf www.irf.com 7 fig. 17 - typical diode i rr vs. i f t j = 150c fig. 18 - typical diode i rr vs. r g t j = 150c; i f = 5.0a fig. 20 - typical diode q rr v cc = 400v; v ge = 15v;t j = 150c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 5.0a; t j = 150c 0 50 100 150 200 r g ( ) 0 4 8 12 16 20 i r r ( a ) 0 200 400 600 800 1000 di f /dt (a/ s) 0 4 8 12 16 20 i r r ( a ) 0 5 10 15 20 i f (a) 0 5 10 15 20 25 i r r ( a ) r g = 22 r g = 47 r g = 100 r g = 150 0 200 400 600 800 1000 di f /dt (a/ s) 0 200 400 600 800 1000 1200 q r r ( n c ) 22 47 100 150 10a 5.0a 3.0a
irgb/s/sl6b60kdpbf 8 www.irf.com fig. 21 - typical diode e rr vs. i f t j = 150c fig. 23 - typical gate charge vs. v ge i ce = 5.0a; l = 600 h fig. 22 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 1 10 100 v ce (v ) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres 0 5 10 15 20 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v 0 5 10 15 i f (a) 50 100 150 200 250 300 e n e r g y ( j ) 47 22 100 150
irgb/s/sl6b60kdpbf www.irf.com 9 fig 25. maximum transient thermal impedance, junction-to-case (diode) fig 24. maximum transient thermal impedance, junction-to-case (igbt) 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.708 0.00022 0.447 0.00089 0.219 0.01037 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri ri (c/w) i (sec) 1.194 0.000172 2.424 0.001517 0.753 0.080325 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri
irgb/s/sl6b60kdpbf 10 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit l rg vcc diode clamp / dut dut / driver - 5v rg vcc dut r = v cc i cm l rg 80 v dut 480v + - dc driver dut 360v
irgb/s/sl6b60kdpbf www.irf.com 11 -50 0 50 100 150 200 250 300 350 400 450 -0.20 0.30 0.80 time( s) v ce (v) -1 0 1 2 3 4 5 6 7 8 9 i ce (a) 90% i ce 5% v ce 5% i ce eof f loss tf -100 0 100 200 300 400 500 16.00 16.10 16.20 16.30 16.40 time ( s) v ce (v) -5 0 5 10 15 20 25 i ce (a) test current 90% test current 5% v ce 10% test current tr eon loss -450 -400 -350 -300 -250 -200 -150 -100 -50 0 50 -0.06 0.04 0.14 0.24 time ( s) v f (v) -12 -10 -8 -6 -4 -2 0 2 4 6 8 i f (a) pe a k i rr t rr q rr 10% peak irr 0 100 200 300 400 500 -5.00 0.00 5.00 10.00 15.00 time ( s) v ce (v) 0 10 20 30 40 50 i ce (a) v ce i ce fig. wf1- typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2- typ. turn-on loss waveform @ t j = 150c using fig. ct.4 fig. wf3- typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf4- typ. s.c waveform @ t j = 150c using fig. ct.3
irgb/s/sl6b60kdpbf 12 www.irf.com example: in the assembly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part number assembly lot code dat e code year 7 = 1997 line c week 19 logo rect ifier int e rnat ional note: "p" in assembly line position indicates "lead-free"

irgb/s/sl6b60kdpbf www.irf.com 13

dimensions are shown in millimeters (inches) note: "p" in as s embly line pos ition indicates "l ead-f ree" f530s this is an irf530s wit h lot code 8024 as s emble d on ww 02, 2000 in the assembly line "l" assembly lot code international rectifier logo part number dat e code year 0 = 2000 we e k 02 line l f530s a = as s e mb l y s i t e code we e k 02 p = de s i gnat e s l e ad- f r e e pr oduct (opt ional) rect ifier internat ional logo lot code assembly year 0 = 2000 dat e code part number

irgb/s/sl6b60kdpbf 14 www.irf.com to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) assembly lot code rectifier int ernat ional as s e mb l e d on ww 19, 1997 note: "p" in assembly line pos i ti on i ndi cates " l ead- f r ee" in the assembly line "c" logo t his is an irl3103l lot code 1789 example: line c dat e code we e k 1 9 ye ar 7 = 1997 part number part number logo lot code as s e mb l y internat ional rect if ier product (optional) p = d e s i gn at e s l e ad- f r e e a = assembly site code we e k 1 9 ye ar 7 = 1997 dat e code or

irgb/s/sl6b60kdpbf www.irf.com 15 ir world headquarters: 101n. sepulveda, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/2013 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. notes: this is only applied to to-220ab package this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. energy losses include "tail" and diode reverse recovery. v cc = 80% (v ces ), v ge = 20v, l = 100 h, r g = 100 .
dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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